The ISSI IS66WV51216DALL is high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (/WE) controls both writing and reading of the memory. A data byte allows Upper Byte (/UB) and Lower Byte (/LB) access.
The IS66WV51216DALL is packaged in the JEDEC standard 48-ball mini BGA (
·High-speed access time:
·CMOS low power operation
·Single power supply
– VDD = 1.7V-1.95V (IS66WV51216DALL)
·Three state outputs
·Data control for upper and lower bytes
·Industrial temperature available