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IS66WV51216DALL单片机破解技术分析

  新锐科技提供各类单片机解密芯片解密、软件解密、单片机破解、芯片破解等相关解密业务。IS66WV51216DALL破解为芯片解密行业又解决了一大技术难题。欢迎带样机上门即解测试,我们比国内同行有技术和价格方面的优势,解密时间短,价格低,成功率高,最快10-30分钟可出程序,最大限度的保护客户的母片不被损坏。

IS66WV51216DALL概述

  The ISSI IS66WV51216DALL is high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's  high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

  When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

  Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (/WE) controls both writing and reading of the memory. A data byte allows Upper Byte (/UB) and Lower Byte (/LB) access.

The IS66WV51216DALL is packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo available for die sales.

IS66WV51216DALL特性

  ·High-speed access time:

  – 70ns

  ·CMOS low power operation

  ·Single power supply

  – VDD = 1.7V-1.95V (IS66WV51216DALL)

  ·Three state outputs

  ·Data control for upper and lower bytes

  ·Industrial temperature available

·Lead-free available

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