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ISSI系列IS42S32800B加密算法解密研究

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  以下是IS42S32800B单片机的简单介绍,供广大客户和技术人员参考,更多IC解密型号及解密合作详情,请直接与我们联系!

  IS42S32800B概述

  The ISSI IS42S32800B is a high-speed CMOS configured as a quad 2M x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK).

  Each of the 2M x 32 bit banks is organized as 4096 rows by 512 columns by 32 bits.Read and write accesses start at a selected locations in a programmed sequence. Accesses begin with the registration of a BankActive command which is then followed by a Read or Write command.

  The ISSI IS42S32800B provides for programmable Read or Write burst lengths of 1,2,4,8,or full page, with a burst termination operation. An auto precharge function may be enable to provide a self-timed row precharge that is initiated at the end of the burst sequence.The refresh functions, either Auto or Self Refresh are easy to use.

  By having a programmable mode register,the system can choose the most suitable modes to maximize its performance.

  These devices are well suited for applications requiring high memory bandwidth.

  IS42S32800B特性

  · Concurrent auto precharge

  · Clock rate:166/143 MHz

  · Fully synchronous operation

  · Internal pipelined architecture

  · Four internal banks (2M x 32bit x 4bank)

  · Programmable Mode

  -CAS#Latency:2 or 3

  -Burst Length:1,2,4,8,or full page

  -Burst Type:interleaved or linear burst

  -Burst-Read-Single-Write

  · Burst stop function

  · Individual byte controlled by DQM0-3

  · Auto Refresh and Self Refresh

  · 4096 refresh cycles/64ms (15.6μs/row)

  · Single +3.3V ±0.3V power supply

  · Interface:LVTTL

  · Package: 86 Pin TSOP-2,0.50mm Pin Pitch

              8x13mm, 90 Ball BGA, Ball pitch 0.8mm

  · Pb-free package is available.

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